Atom-thin magnetic crystal makes memory chips 10x more efficient

Researchers at Chalmers University of Technology in Sweden have developed an atomically thin, two-dimensional magnetic material that significantly improves the energy efficiency of memory chips, reducing power consumption by a factor of ten. This novel material uniquely combines two opposing magnetic states—ferromagnetism and antiferromagnetism—within a single crystal structure, a feat previously only achievable by stacking multiple layers of different materials. The coexistence of these magnetic orders in one ultra-thin layer allows for rapid and easy switching of electron spin directions without requiring external magnetic fields, which are typically energy-intensive. The material, composed of a magnetic alloy of cobalt, iron, germanium, and tellurium, leverages van der Waals forces for stacking, enhancing stability and simplifying manufacturing by avoiding interface issues common in multilayer systems. This breakthrough addresses the growing global challenge of energy consumption by digital memory, projected to reach nearly 30% of global energy use in coming decades. The discovery promises to enable ultra-efficient memory chips for