In a first, scientists observe short-range order in semiconductors

Scientists from Lawrence Berkeley National Laboratory and George Washington University have, for the first time, directly observed short-range atomic order (SRO) in semiconductors, revealing hidden patterns in the arrangement of atoms like germanium, tin, and silicon inside microchips. This breakthrough was achieved by combining advanced 4D scanning transmission electron microscopy (4D-STEM) enhanced with energy filtering to improve contrast, and machine learning techniques including neural networks and large-scale atomic simulations. These methods allowed the team to detect and identify recurring atomic motifs that were previously undetectable due to weak signals and the complexity of atomic arrangements. The discovery of SRO is significant because it directly influences the band gap of semiconductors, a critical property that governs their electronic behavior. Understanding and controlling these atomic-scale patterns could enable the design of materials with tailored electronic properties, potentially revolutionizing technologies such as quantum computing, neuromorphic devices, and advanced optical sensors. While this research opens new avenues for atomic-scale material engineering, challenges