New 2D magnetic transistor delivers 10x stronger current switching

MIT engineers have developed a novel magnetic transistor using a two-dimensional magnetic semiconductor, chromium sulfur bromide, which enables current switching that is ten times stronger than existing magnetic transistor designs. This device operates with significantly lower energy compared to traditional silicon transistors, overcoming silicon’s voltage limitations that hinder further efficiency improvements. The magnetic semiconductor’s stable structure allows precise switching between two magnetic states, altering its electronic behavior and enabling low-energy operation. The team’s innovative fabrication method, which avoids solvents or glue by directly transferring the thin magnetic film onto a silicon substrate with tape, results in a clean interface that enhances device performance. Beyond stronger and more energy-efficient switching, the new transistor uniquely integrates logic and memory functions, allowing it to store information directly rather than relying on separate magnetic memory cells. This built-in memory capability, combined with faster and more reliable readouts due to the stronger signal, represents a significant advancement for spintronic devices. The researchers demonstrated control of the magnetic state both via external magnetic fields and electrical currents,