New approach allows to insert, monitor quantum defects in real time

Researchers from the UK’s universities of Oxford, Cambridge, and Manchester have developed a novel two-step fabrication method that enables the precise insertion and real-time monitoring of quantum defects—specifically Group IV centers such as tin-vacancy centers—in synthetic diamonds. These quantum defects, created by implanting single tin atoms into diamond with nanometer accuracy using a focused ion beam, serve as spin-photon interfaces essential for storing and transmitting quantum information. The process is activated and controlled via ultrafast laser annealing, which excites the defect centers without damaging the diamond and provides spectral feedback for in-situ monitoring and control during fabrication. This breakthrough addresses a major challenge in reliably producing Group IV quantum defects, which are prized for their high symmetry and favorable optical and spin properties. The ability to monitor defect activation in real time allows researchers to efficiently and precisely create quantum emitters, paving the way for scalable quantum networks that could enable ultrafast, secure quantum computing and sensing technologies. The method’s versatility also suggests