Quantum leap promises 1,000x faster, silicon-free electronics

Researchers at Northeastern University have developed a quantum material, 1T-TaS₂, that can switch between conductive and insulating states on demand using a technique called thermal quenching—controlled heating and cooling—and light exposure. This breakthrough enables electronic switching speeds up to 1,000 times faster than current silicon-based processors, potentially moving from gigahertz to terahertz operation. Unlike silicon, which is reaching its physical limits in speed and miniaturization, this quantum material can perform both conductive and insulating functions within a single substance, controlled simply by light, eliminating the need for complex interfaces in electronics. This advancement could revolutionize electronics by enabling devices that are exponentially smaller, faster, and more efficient. The ability to manipulate quantum materials near room temperature, rather than at cryogenic temperatures, makes this approach more practical for real-world applications. Experts highlight that this innovation represents a paradigm shift in electronics design, complementing efforts in quantum computing and materials science to overcome the limitations of traditional silicon technology. The