US labs build low-cost gallium nitride chips for next-gen radars

Researchers at MIT and partner institutions have developed a novel, low-cost fabrication process that integrates high-performance gallium nitride (GaN) transistors onto standard silicon CMOS chips. This breakthrough addresses previous challenges related to GaN’s high cost and specialized integration needs by using a scalable method compatible with existing semiconductor manufacturing. The process involves creating many tiny GaN transistor "dielets," which are bonded onto silicon chips using a low-temperature copper-to-copper bonding technique. This approach maintains material functionality, reduces system temperature, and significantly enhances performance while keeping costs low. The team demonstrated the effectiveness of this hybrid chip technology by building a power amplifier that outperformed traditional silicon-based devices in signal strength and efficiency, indicating potential improvements in wireless communication such as better call quality, increased bandwidth, and longer battery life. The integration method avoids expensive materials and high temperatures, making it compatible with standard semiconductor foundries and promising broad applicability in commercial electronics. Additionally, the researchers suggest that this technology could support quantum computing applications due to